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HANBit
HMS1M32M8S
HAN BIT
High-Speed SRAM MODULE 4Mbyte(1M x 32-Bit) Part No.
HMS1M32M8S, HMS1M32Z8S
GENERAL DESCRIPTION
The HMS1M32M8S is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, doublesided, FR4-printed circuit board. The HMS1M32M8S also support low data retention voltage for battery back-up operations with low data retention current. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible
FEATURES
Part identification
- HMS1M32M8S : SIMM design - HMS1M32Z8S : ZIP design Pin-Compatible with the HMS1M32M8S
Vss A3 A2 A1 A0 Vcc A11 /OE A10 Vcc /CE_LL2 /CE_LL1 DQ7 DQ0 DQ1 DQ2 DQ6 DQ5 DQ4 DQ3 A15 A17 /WE A13 Vcc DQ8 DQ9 DQ10 /CE_LM2 Vcc /CE_LM1 DQ15 DQ14 DQ13 DQ12 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
PIN ASSIGNMENT
A18 A16 Vss A6 Vcc A5 A4 Vcc /CE_UM2 /CE_UM1 DQ23 DQ16 DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 Vcc A14 A12 A7 Vcc A8 A9 DQ24 DQ25 DQ26 /CE_UU2 /CE_UU1 DQ31 DQ30 DQ29 DQ28 DQ27 Vss 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72
Access times : 10, 12, 15, 17 and 20ns High-density 4MByte design High-reliability, high-speed design Single + 5V 0.5V power supply All inputs and outputs are TTL-compatible FR4-PCB design 72-Pin SIMM Design
OPTIONS
Timing
10ns access 12ns access 15ns access 17ns access 20ns access
MARKING
-10 -12 -15 -17 -20 M
Packages
72-pin SIMM
SIMM TOP VIEW
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HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8S
FUNCTIONAL BLOCK DIAGRAM
DQ 0-DQ31 DQ 0-31 A0-A19 A0-18 DQ 32 A20
A0-19 DQ24-31 /WE /OE /CE-UU1
A0-19 /WE /OE /CE-UU2 DQ24-31
U1
/CE
U5
/CE
A0-19 DQ16-23 /WE /OE /CE-UM1 A0-19 DQ 8-15 /WE /OE /CE-LM1
A0-19 DQ16-23 /WE /OE /CE-UM2 A0-19 DQ 8-15 /WE /OE /CE-LM2
U2
/CE
U6
/CE
U3
/CE
U7
/CE
A0-19 /WE /OE DQ 0-7 /WE /OE /WE /OE
A0-19 DQ 0-7 /WE /OE
U4
/CE
U8
/CE
/CE-LL1
/CE-LL2
TRUTH TABLE
MODE STANDBY NOT SELECTED READ WRITE or ERASE /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Q D POWER STANDBY ACTIVE ACTIVE ACTIVE
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HANBit
NOTE: X means don't care
HMS1M32M8S
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature SYMBOL VIN,OUT VCC PD TSTG RATING -0.5V to +7.0V -0.5V to +7.0V 8W -55oC to +125oC
Operating Temperature TA 0oC to +70oC Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage * SYMBOL VCC VSS VIH VIL MIN 4.5V 0 2.2 -0.5*
( TA=0 to 70 o C )
TYP. 5.0V 0 -
MAX 5.5V 0 Vcc+0.5V** 0.8V
VIL(Min.) = -2.0V (Pulse Width 10ns) for I 20 mA
** VIH(Max.) = Vcc+2.0V (Pulse Width 10ns) for I 20 mA
DC AND OPERATING CHARACTERISTICS (1)
(0oC TA 70 oC ; Vcc = 5V 0.5V ) PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage * Vcc=5.0V, Temp=25 oC SYMBO L ILI IL0 VOH VOL
TEST CONDITIONS VIN = Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC IOH = -4.0mA IOL = 8.0mA
MIN -2 -2 2.4
MAX 2 2 0.4
UNITS A A V V
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HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8S
DC AND OPERATING CHARACTERISTICS (2)
MAX DESCRIPTION Power Supply Current: Operating Power Supply Current: Standby TEST CONDITIONS Min. Cycle, 100% Duty /CE=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, /CE=VIH f=0MHZ, /CEVCC-0.2V, VIN VCC-0.2V or VIN0.2V SYMBOL lCC lSB lSB1 -15 170 50 10 -17 165 50 10 -20 160 50 10 UNIT mA mA mA
CAPACITANCE
DESCRIPTION Input /Output Capacitance Input Capacitance TEST CONDITIONS VI/O=0V VIN=0V SYMBOL CI/O CIN MAX 8 7 UNIT pF pF
* NOTE : Capacitance is sampled and not 100% tested
AC CHARACTERISTICS (0oC TA 70 oC ; Vcc = 5V 0.5V, unless otherwise specified)
TEST CONDITIONS PARAMETER Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load VALUE 0.V to 3V 3ns 1.5V See below
Output +5V
Load
Output Load (B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ +5V
480 DOUT 255 30pF* DOUT 255
480 5pF*
* Including scope and jig capacitance
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HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8S
READ CYCLE
-15 PARAMETER Read Cycle Time Address Access Time Chip Select to Output Output Enable to Output Output Enable to Low-Z Output Chip Enable to Low-Z Output Output Disable to High-Z Output Chip Disable to High-Z Output Output Hold from Address Change Chip Select to Power Up Time Chip Select to Power Down Time
SYMBOL MIN MAX MIN MAX MIN MAX
-17
-20
UNIT
tRC tAA tCO tOE tOLZ tLZ tOHZ tHZ tOH tPU tPD
15 0 3 0 0 3 0 -
15 15 7 7 7 15
17 0 3 0 0 3 0 -
17 17 8 8 8 17
20 0 3 0 0 3 0 -
20 20 9 9 9 20
ns ns ns ns ns ns ns ns ns ns ns
WRITE CYCLE
-15 PARAMETER Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write Write Pulse Width (/OE=High) Write Recovery Time (/OE=Low) Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End of Write to Output Low-Z
SYMBOL MIN MAX MIN MAX MIN MAX
-17
-20
UNIT
tWC tCW tAS tAW tWP tWR tWZ tDW tDH tOW
15 12 0 12 12 0 0 8 0 3
7 -
17 13 0 13 13 0 0 9 0 3
8 -
20 14 0 14 14 0 0 10 0 3
9 -
ns ns ns ns ns ns ns ns ns ns
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HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8S
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE (Address Controlled) ( /CE = /OE = VIL , /WE = VIH)
tRC Address tAA tOH Data out
Previous Data Valid Data Valid
TIMING WAVEFORM OF READ CYCLE (/WE = VIH )
tRC Address tAA /CE tLZ(4) /OE tOLZ Data Out High-Z
Data Valid
tHZ(3,4) tCO tOHZ tOE tOH
Notes (Read Cycle)
1. /WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ (max.) is less than tLZ (min.) both for a given device and from device to device.
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HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8S
TIMING WAVEFORM OF WRITE CYCLE ( /WE Controlled )
tWC
Address
tAW tWR(5)
/OE
tCW(3)
/CE
tAS(4) tWP(2)
/WE
tDW tDH High-Z Data Valid tOHZ
Data In
Data Out
High-Z
TIMING WAVEFORM OF WRITE CYCLE ( /OE Low Fixed )
tWC
Address
tAW tCW(3) tWR(5)
/CE
tAS(4) tOH tWP(2) tDW tDH Data Valid tWHZ(6,7) tOW High-Z(8) (10) (9)
/WE
Data In
High-Z
Data Out
Notes( Write Cycle)
1. All write cycle timing is referenced from the last valid address to the first transition address. 2. A write occurs during the overlap of a low /CE and a low /WE. A write begins at the latest transition among /CE going low and /WE going low: A write ends at the earliest transition among /CE going high and /WE going high. tWP is measured from the beginning of write to the end of write. 3. tCW is measured from the later of /CE going low to the end of write.
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HANBit
HMS1M32M8S
4. tAS is measured from the address valid to the beginning of write. 5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CE, or /WE going high. 6. If /OE,/CE and /WE are in the read mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase of the output must not be applied because bus contention can occur. 7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. 8. If /CE goes low simultaneously with /WE going low or after /WE going low, the outputs remain high impedance state. 9. DOUT is the read data of the new address. 10. When /CE is low: I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be applied.
FUNCTIONAL DESCRIPTION
/CE H L L L /WE X* H H L /OE X H L X MODE Not Select Output Disable Read Write I/O PIN High-Z High-Z DOUT DIN SUPPLY CURRENT I SB, I SB1 ICC ICC ICC
Note: X means Don't Care
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HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8S
PACKAGING DIMMENSIONS
SIMM Design
108.20 mm 3.18 mm TYP(2x)
16 mm 6.35 mm
1
72
2.03 mm 1.02 mm 6.35 mm 95.25 mm 1.27 mm 3.34 mm
0.25 mm MAX
2.54 mm MIN
Gold : 1.040.10 mm 1.27 Solder : 0.9140.10 mm
1.290.08 mm
(Solder & Gold Plating Lead)
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HANBit Electronics Co.,Ltd.
HANBit
HMS1M32M8S
ORDERING INFORMATION
1
2
3
4
5
6
7
8
HMS
HANBit Memory Modules SRAM
1M 32 M8S-15
15ns Access Time Component, Customer SIMM x32bit 1M
1. - Product Line Identifier HANBit Technology --------------------------------------- H 2. - Memory Modules 3. - SRAM 4. - Depth : 1M 5. - Width : x 32bit 6. - Package Code SIMM ------------------------------------------------------- M ZIP ------------------------------------------------------- Z 7. - Number of Memory Components---8, Customer-----S 8. - Access time 10 ----------------------------------------------------------- 10ns 12 ----------------------------------------------------------- 12ns 15 ----------------------------------------------------------- 15ns 17 ----------------------------------------------------------- 17ns 20 ----------------------------------------------------------- 20ns
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